By Prof. Dr. Rolf Haug (auth.)
The current quantity forty six of Advances in reliable kingdom Physics includes the written models of chosen invited lectures from the spring assembly of the Arbeitskreis Festkörperphysik of the Deutsche Physikalische Gesellschaft which was once held from 27 to 31 March 2006 in Dresden, Germany. Many topical talks given on the quite a few symposia are integrated. every one of these have been equipped collaboratively by means of numerous of the divisions of the Arbeitskreis. The topis diversity from zero-dimensional physics in quantum dots, molecules and nanoparticles over one-dimensional physics in nanowires and 1d structures to extra utilized matters like optoelectronics and fabrics technology in skinny movies. The contributions span the entire width of solid-state physics from really simple technological know-how to applications.
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The distribution function of the number of events in this time intervalle t0 is shown in Fig. 3a, and characterizes directly the current ﬂuctuations. In order to compare the experimental result with the theory presented in Sect. 3, the tunneling rates are ﬁrst determined as explained in Sect. 4, and then included in (7) and (6) in order to determine the probability distribution Pt0 (n). The result is shown as a plain line in Fig. 3a. The agreement with the experimental data is striking, knowing that no adjustable parameters are used.
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The evolution of the occupancy of the QD, with 0 or 1 excess electron, can be describe by the rate equation: d dt 0 1 = −Γin Γout Γin −Γout 0 1 , (1) with Γin = gs ΓL fL ( i ) + gs ΓL fL ( i ) and Γout = ΓL (1 − fL ( i )) + ΓR (1 − fR ( i )) , (2) (3) where fL and fR are the Fermi distributions in the left and right leads, i is the energy of the level in the quantum dot, and gs is the spin degeneracy of this level. These rates can be simpliﬁed in the case of large bias voltage, kB T , for which the electron tunnels into the QD only through |±eV /2− i | a single lead, the source (being either left or right lead, depending on the sign of the bias voltage), and tunnels out of the QD through the other contact, the drain: Γin = gs ΓL(R) = Γs and Γout = ΓR(L) = ΓD .
Advances in Solid State Physics by Prof. Dr. Rolf Haug (auth.)